In integrated circuits, electronic components such as resistors, capacitors, diodes, transistors are formed directly on the surface of the silicon crystal. Manufacturing integrated circuits would make more sense if you first understand the process of how some of these components form the basics.

Before the IC was developed, it is known that ordinary electronic components can be made of silicon. The question now is how to make them and connect the circuit from the same piece of silicon? The solution is to change or paint, the chemical composition of the tiny areas of the silicon crystal surface is added to other chemicals, called dopants. Some doped bonds with silicon production regions where the doping atoms have an electron that they can give up. These are called N areas. Other impurities bond with the silicon production area, where the doping atoms have space to take an electron. These are called areas of P. When the P region contacts the N region, the boundary between them is called a PN junction. This boundary is only 0.000004 inches (0.0001 cm) wide, but the key is the operation of the integrated circuit components.

Within the PN junction, the bonds of the two regions are in such a way as to create a third region of atoms, called a depletion region, in which the P dopant atoms capture all the additional electrons of the N dopants, thereby consuming they. One of the phenomena is that a positive voltage applied to the P region causes current to flow through the region where the junction is N, but a similar positive voltage applied to the N region will result in little or no current flowing through the junction back to the P region. Any behavior or insulation of the PN junction depends on which side of the applied voltage can be used to form the integrated circuit component directly and in the same way the control current of the diode and transistor flows through this capability. A diode, for example, is just a PN junction. The function of integrated circuit components, analog resistors and capacitors can also be formed by varying the number and type of dopants and changing the shape and relative placement and N regions of P.

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